DMN2041L-7【PDF 2/6 页】MOSFET N-CH 20V 6.4A SOT23

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DMN2041L

Maximum Ratings

(@T A = +25°C, unless otherwise specified.)

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

20

±12

Units

V

V

Continuous Drain Current (Note 5)

Pulsed Drain Current (Note 6)

Steady

State

T A = +25°C

T A = +70°C

I D

I DM

6.4

4.5

30

A

A

Thermal Characteristics

Characteristic

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @ T A = +25°C

Operating and Storage Temperature Range

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout.

Symbol

P D

R θ JA

T J, T STG

Value

0.78

161

-55 to +150

Unit

W

°C/W

°C

6. Repetitive rating, pulse width limited by junction temperature.

Electrical Characteristics

(@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T J = 25°C

Gate-Source Leakage

BV DSS

I DSS

I GSS

20

—

—

—

—

—

—

1.0

±100

V

μA

nA

V GS = 0V, I D = 250 μ A

V DS = 20V, V GS = 0V

V GS = ±12V, V DS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V GS(th)

R DS (ON)

|Y fs |

V SD

0.5

—

—

—

—

20

26

6

0.7

1.2

28

41

—

1.2

V

m ?

S

V

V DS = V GS , I D = 250 μ A

V GS = 4.5V, I D = 6.0A

V GS = 2.5V, I D = 5.2A

V DS = 10V, I D = 6A

V GS = 0V, I S = 1.7A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

C iss

C oss

C rss

R g

Q g

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

—

—

—

—

—

—

—

—

—

—

—

—

550

88

81

1.34

15.6

7.2

1.0

1.9

4.69

13.19

22.10

6.43

—

—

—

—

—

—

—

—

—

—

—

—

pF

?

nC

nC

ns

V DS = 10V, V GS = 0V,

f = 1.0MHz

V DS = 0V, V GS = 0V, f = 1MHz

V GS = 10V, V DS = 10V, I D = 6A

V GS = 4.5V, V DS = 10V, I D = 6A

V DD = 10V, V GEN = 4.5V,

R GEN = 1 ? , I D = 6.7A

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN2041L

Document number: DS31962 Rev. 2 - 2

2 of 6

www.diodes.com

October 2013

? Diodes Incorporated

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